ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,563, issued on May 27, was assigned to PANASONIC HOLDINGS Corp. (Osaka, Japan).

"Nitride semiconductor device" was invented by Masahiro Ogawa (Osaka, Japan), Daisuke Shibata (Kyoto, Japan) and Satoshi Tamura (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes a substrate, a first electron transport layer above the substrate, a first electron supply layer above the first electron transport layer, a first nitride semiconductor layer above the first electron supply layer, a first opening passing through the first nitride semiconductor layer and the first electron supply layer and reaching the first elect...