ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,894, issued on June 10, was assigned to PANASONIC HOLDINGS Corp. (Osaka, Japan).
"Nitride semiconductor device" was invented by Daisuke Shibata (Kyoto, Japan), Satoshi Tamura (Osaka, Japan) and Masahiro Ogawa (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes: a substrate; an n-type drift layer; a p-type blocking layer; a gate opening which penetrates through the blocking layer to the drift layer; an electron transport layer and an electron supply layer provided on an inner face of the gate opening; a gate electrode above the electron supply layer and covering the gate opening; a source opening penet...