ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,023, issued on Jan. 13, was assigned to PANASONIC HOLDINGS Corp. (Osaka, Japan).

"Nitride semiconductor device" was invented by Hiroyuki Handa (Osaka, Japan), Daisuke Shibata (Kyoto, Japan) and Satoshi Tamura (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity type which is provided above the substrate; a second nitride semiconductor layer which is provided above the first nitride semiconductor layer; an electron transport layer and an electron supply layer which are sequentially provided above the second nitride semiconductor l...