ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,730, issued on April 1, was assigned to PANASONIC HOLDINGS Corp. (Osaka, Japan).
"Nitride semiconductor device" was invented by Naohiro Tsurumi (Kyoto, Japan), Daisuke Shibata (Kyoto, Japan) and Satoshi Tamura (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes: a substrate; a nitride semiconductor layer above the substrate; a high-resistance layer above the nitride semiconductor layer; a p-type nitride semiconductor layer above the high-resistance layer; a first opening penetrating through the p-type nitride semiconductor layer and the high-resistance layer to the nitride semiconductor layer; an elec...