US Patent Issued to OTTO-VON-GUERICKE-UNIVERSITAT MAGDEBURG on Dec. 9 for "Method for growing a semiconductor assembly and semiconductor assembly" (German Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,365, issued on Dec. 9, was assigned to OTTO-VON-GUERICKE-UNIVERSITAT MAGDEBURG (Magdeburg, Germany).

"Method for growing a semiconductor assembly and semiconductor assembly" was invented by Armin Dadgar (Magdeburg, Germany) and Florian Horich (Magdeburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a method for growing a semiconductor assembly. The method includes the steps of providing a silicon substrate and growing two metal nitride layers, each metal nitride layer being grown by means of a metal target and a plasma. For the second metal nitride layer a higher hydrogen content is used, allowing for better crysta...