US Patent Issued to OSAKA UNIVERSITY on April 29 for "Resistance device, integrated circuit device, implantable device, and correction factor determining method" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,285,600, issued on April 29, was assigned to OSAKA UNIVERSITY (Osaka, Japan).

"Resistance device, integrated circuit device, implantable device, and correction factor determining method" was invented by Seiji Kameda (Suita, Japan) and Masayuki Hirata (Suita, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistance device (100) includes a field-effect transistor (TN) and a voltage applying circuit (1). The voltage applying circuit (1) applies a control voltage (Vgs) between the gate and source of the field-effect transistor (TN) according to a temperature (T) to control a resistance value (R) between the drain and source of the field-effect trans...