ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,227, issued on March 25, was assigned to ORDOS YUANSHENG OPTOELECTRONICS Co. LTD. (Inner Mongolia, China) and BOE TECHNOLOGY GROUP Co. LTD. (Beijing).
"Thin film transistor, display substrate and display device with reduced leakage current" was invented by Chenglong Wang (Beijing), Yezhou Fang (Beijing), Feng Li (Beijing), Lei Yao (Beijing), Lei Yan (Beijing), Kai Li (Beijing), Lin Hou (Beijing), Xiaogang Zhu (Beijing), Yun Gao (Beijing), Yanzhao Peng (Beijing), Teng Ye (Beijing) and Hua Yang (Beijing).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a thin film transistor, a display substrate and a display device, and ...