US Patent Issued to OMRON on May 13 for "Overcurrent protection circuit for protecting semiconductor device from overcurrent at high speed, and switching circuit provided with the overcurrent protection circuit" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,301,221, issued on May 13, was assigned to OMRON Corp. (Kyoto, Japan).

"Overcurrent protection circuit for protecting semiconductor device from overcurrent at high speed, and switching circuit provided with the overcurrent protection circuit" was invented by Satoshi Iwai (Kyoto, Japan) and Mamoru Sueki (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The overcurrent protection circuit includes: a first transistor having an emitter connected to a control voltage; and a second transistor having a base connected to a collector of the first transistor, a collector connected to a base of the first transistor and pulled up to a voltage, and a grou...