US Patent Issued to OMNIVISION TECHNOLOGIES on Sept. 16 for "CMOS devices with asymmetrically passivated isolation structure and methods thereof" (California Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,125, issued on Sept. 16, was assigned to OMNIVISION TECHNOLOGIES INC. (Santa Clara, Calif.).

"CMOS devices with asymmetrically passivated isolation structure and methods thereof" was invented by Hui Zang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pixel for an image sensor is described. The pixel comprises a photodiode and an isolation structure disposed within a semiconductor substrate and between a first and second side of the semiconductor substrate. The isolation structure includes a bottom sidewall coupled to a first sidewall and a second sidewall of the isolation structure. The isolation structure is disposed, at least ...