US Patent Issued to OmniVision Technologies on Nov. 4 for "High dynamic range, backside-illuminated, low crosstalk image sensor with walls on backside surface to isolate photodiodes" (California Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,837, issued on Nov. 4, was assigned to OmniVision Technologies Inc. (Santa Clara, Calif.).

"High dynamic range, backside-illuminated, low crosstalk image sensor with walls on backside surface to isolate photodiodes" was invented by Hui Zang (San Jose, Calif.) and Gang Chen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A backside-illuminated image sensor includes photodiodes in photodiode regions electrically isolated by filled trenches with openings in a dielectric layer over the photodiodes. The image sensor has a metal grid aligned over the trenches, the metal grid within 80 nanometers of the trenches. The image sensor is formed ...