US Patent Issued to OmniVision Technologies on Nov. 18 for "Pixel with vertical transfer structure for dark current improvement, an image sensor thereof and a fabrication method thereof" (California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,846, issued on Nov. 18, was assigned to OmniVision Technologies Inc. (Santa Clara, Calif.).

"Pixel with vertical transfer structure for dark current improvement, an image sensor thereof and a fabrication method thereof" was invented by Hui Zang (San Jose, Calif.) and Gang Chen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pixel of an image sensor includes a semiconductor substrate having a front surface and a back surface opposing the front surface, a photodiode and floating diffusion (FD) region formed in the substrate along a first pixel axis parallel to the front surface and a transfer gate formed in the front surface of the ...