ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,394, issued on Nov. 11, was assigned to OmniVision Technologies Inc. (Santa Clara, Calif.).
"Central deep trench isolation shift" was invented by Hui Zang (San Jose, Calif.) and Chao Niu (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Image sensors include a pixel array arranged about an array center, each pixel of the pixel array having a photodiode formed in a semiconductor substrate, and a central deep trench isolation structure disposed in the semiconductor substrate relative to a pixel center between the photodiode and an illuminated surface of the semiconductor substrate. If the pixel center is not coincident with the array...