US Patent Issued to OMNIVISION TECHNOLOGIES on March 25 for "Image sensor with varying depth deep trench isolation structure for reduced crosstalk" (California Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,562, issued on March 25, was assigned to OMNIVISION TECHNOLOGIES INC. (Santa Clara, Calif.).

"Image sensor with varying depth deep trench isolation structure for reduced crosstalk" was invented by Seong Yeol Mun (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor comprises a first photodiode, a second photodiode, and a deep trench isolation structure. The first photodiode and the second photodiode are each disposed within a semiconductor substrate. The first photodiode is adjacent to the second photodiode. The deep trench isolation structure has a varying depth disposed within the semiconductor substrate between the ...