US Patent Issued to OmniVision Technologies on April 22 for "Dual depth junction structures and process methods" (California Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,839, issued on April 22, was assigned to OmniVision Technologies Inc. (Santa Clara, Calif.).

"Dual depth junction structures and process methods" was invented by Hui Zang (San Jose, Calif.) and Gang Chen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors, electronic devices, and methods are provided. Transistors include a gate trench formed in a semiconductor substrate and extending to a gate trench depth, and a source and a drain formed as doped regions in the semiconductor substrate and having a first conductive type. The source and the drain are formed along a channel length direction of the transistor at a first end and ...