ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,650, issued on May 13, was assigned to OMNIVISION TECHNOLOGIES (SHANGHAI) Co. LTD. (Shanghai).
"Image sensor and method for fabricating the same" was invented by Liqun Dong (Shanghai), Haibo Xiao (Shanghai), Shuaibing Lin (Shanghai) and Xinzhi Dai (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides an image sensor and a method for fabricating the image sensor. The image sensor includes a semiconductor substrate, photodiodes (PD), deep isolation trenches, first deep P-well blocks and second deep P-wells. The isolation trenches surrounds the PDs, and each of the isolation trenches is separated from any adjacent isol...