US Patent Issued to Ohio State Innovation Foundation on Dec. 2 for "Semiconductor devices with a compositionally graded layer, and methods of making and use thereof" (Ohio Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,493, issued on Dec. 2, was assigned to Ohio State Innovation Foundation (Columbus, Ohio).

"Semiconductor devices with a compositionally graded layer, and methods of making and use thereof" was invented by Siddharth Rajan (Columbus, Ohio) and Sushovan Dhara (Columbus, Ohio).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are semiconductor devices with a compositionally graded layer, and methods of making and use thereof."

The patent was filed on May 4, 2023, under Application No. 18/143,191.

*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=...