US Patent Issued to OCI on June 24 for "Method of preparing a silicon carbide crystal by deposition onto at least a pair of conductive heating elements" (South Korean Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,338,544, issued on June 24, was assigned to OCI COMPANY LTD. (Seoul, South Korea).

"Method of preparing a silicon carbide crystal by deposition onto at least a pair of conductive heating elements" was invented by Gabok Kim (Seongnam-si, South Korea), Byungchang Kang (Seongnam-si, South Korea), Byunghyun Park (Seongnam-si, South Korea), Junki Jeon (Seongnam-si, South Korea), Changwon Jeong (Seongnam-si, South Korea) and Seungan Chyun (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of preparing a high-purity silicon carbide (SiC) crystal, and more specifically, to a method of preparing high-purity SiC having an extremely ...