US Patent Issued to NXP USA on Nov. 4 for "Transistor with aligned field plate and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,798, issued on Nov. 4, was assigned to NXP USA INC. (Austin, Texas).

"Transistor with aligned field plate and method of fabrication therefor" was invented by Darrell Glenn Hill (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a semiconductor substrate and a gate structure at the upper surface of the substrate. The gate structure is non-planar and includes a metal gate electrode with first and second sidewalls. A first dielectric layer is present over the gate structure. The first dielectric layer includes a first portion that overlies the first sidewall and a second portion that overlies the second sidewall...