ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,803, issued on Nov. 18, was assigned to NXP USA Inc. (Austin, Texas).
"Transistor with defect mitigation structures" was invented by Congyong Zhu (Gilbert, Ariz.), Darrell Glenn Hill (Chandler, Ariz.) and David Robert Currier (Mesa, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a semiconductor substrate and a gate structure formed over the substrate. When fabricating the transistor device, at least one dielectric layer may be formed over ohmic contact structures of the transistor device, which may mitigate migration of material, such as metal, from the ohmic contact structures onto sensitive surfaces of the transi...