US Patent Issued to NXP USA on March 4 for "Semiconductor device with open cavity and method therefor" (Arizona Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,842, issued on March 4, was assigned to NXP USA Inc. (Austin, Texas).

"Semiconductor device with open cavity and method therefor" was invented by Michael B. Vincent (Chandler, Ariz.) and Scott M. Hayes (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device is provided. The method includes placing a semiconductor die and routing structure on a carrier substrate. At least a portion of the semiconductor die and routing structure are encapsulated with an encapsulant. A cavity formed in the encapsulant. A top portion of the routing structure is exposed through the cavity. A conductive trace is formed to...