ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,571, issued on March 25, was assigned to NXP USA Inc. (Austin, Texas).
"Bias control circuit for power transistors" was invented by Elie A. Maalouf (Mesa, Ariz.) and Xu Jason Ma (Chandler, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A system includes a reference field effect transistor (FET), wherein the reference FET is a depletion mode transistor, and a bias control circuit. The bias control circuit includes a voltage sensor connected to a drain terminal of the reference FET. The voltage sensor is configured to measure a voltage at the drain terminal of the reference FET as a measured voltage, determine a voltage difference between a ref...