US Patent Issued to NXP USA on June 10 for "Transistor die with primary and ancillary transistor elements" (Arizona Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,778, issued on June 10, was assigned to NXP USA INC. (Austin, Texas).

"Transistor die with primary and ancillary transistor elements" was invented by Humayun Kabir (Gilbert, Ariz.), Ibrahim Khalil (Gilbert, Ariz.) and Bruce McRae Green (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor die includes input and output terminals and a source through-substrate via (TSV) between the input and output terminals. First and second primary drain contacts extend from the output terminal toward the input terminal past first and second sides, respectively, of the source TSV. An ancillary region is located adjacent to the source TSV, and b...