ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,883, issued on June 10, was assigned to NXP USA Inc. (Austin, Texas).
"Polycrystalline semiconductor resistor" was invented by Ronghua Zhu (Chandler, Ariz.), Jan Claes (Nijmegen, Netherlands), Xu Cheng (Chandler, Ariz.), Xin Lin (Phoenix), Jianhua He (Eindhoven, Netherlands), Todd Roggenbauer (Austin, Texas) and James Gordon Boyd (Pflugerville, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure i...