US Patent Issued to NXP USA on July 22 for "Transistor with dielectric spacers and field plate and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,380, issued on July 22, was assigned to NXP USA Inc. (Austin, Texas).

"Transistor with dielectric spacers and field plate and method of fabrication therefor" was invented by Darrell Glenn Hill (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a semiconductor substrate and a gate structure formed over the substrate. Forming the gate structure may include steps of forming a multi-layer dielectric stack over the substrate, performing an anisotropic dry etch of the multi-layer dielectric stack to form a gate channel opening, forming a conformal dielectric layer over the substrate, performing an anisotropic dry ...