US Patent Issued to NXP USA on July 15 for "Wafer with semiconductor devices and integrated electrostatic discharge protection" (Arizona Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,294, issued on July 15, was assigned to NXP USA Inc. (Austin, Texas).

"Wafer with semiconductor devices and integrated electrostatic discharge protection" was invented by Colby Greg Rampley (Phoenix), Bruce McRae Green (Gilbert, Ariz.) and David Cobb Burdeaux (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer includes a substrate that includes a channel layer, a first active region, a second active region, and a saw street region between the first active region and the second active region. The wafer includes a first device formed on the substrate in the first active region. The first device includes a first portion of the channel ...