US Patent Issued to NXP USA on July 15 for "Nanosheet transistors with reduced source/drain resistance and associated method of manufacture" (Texas Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,936, issued on July 15, was assigned to NXP USA Inc. (Austin, Texas).

"Nanosheet transistors with reduced source/drain resistance and associated method of manufacture" was invented by Mark Douglas Hall (Austin, Texas), Craig Allan Cavins (Austin, Texas), Tushar Praful Merchant (Austin, Texas) and Asanga H. Perera (West Lake Hills, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and fabrication method are described for forming a nanosheet transistor device by forming a nanosheet transistor stack (12-18, 25) of alternating Si and SiGe layers which are selectively processed to form metal-containing current terminal or source...