US Patent Issued to NXP USA on July 1 for "Semiconductor device having galvanic isolation and method therefor" (Arizona, Texas, Michigan Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,753, issued on July 1, was assigned to NXP USA INC. (Austin, Texas).

"Semiconductor device having galvanic isolation and method therefor" was invented by Jerry Rudiak (Phoenix), Burton Jesse Carpenter (Austin, Texas) and Fred T. Brauchler (Canton, Mich.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package leadframe having a first die pad and a second die pad separated from the first die pad. A first semiconductor die is attached to the first die pad of the package leadframe. A second semiconductor die is attached to the second die pad of the pa...