US Patent Issued to NXP USA on Jan. 27 for "Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor" (Arizona Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,512, issued on Jan. 27, was assigned to NXP USA INC. (Austin, Texas).

"Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor" was invented by Philippe Renaud (Chandler, Ariz.), Bernhard Grote (Phoenix) and Bruce McRae Green (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer, a first current-carrying electrode, and a second current-carrying electrode are formed over the semiconductor substrate. The first current-carrying electrode and the second current-carrying electrode include ...