US Patent Issued to NXP USA on Feb. 11 for "Multiple-stage Doherty power amplifiers implemented with multiple semiconductor technologies" (Dutch, American Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,713, issued on Feb. 11, was assigned to NXP USA Inc. (Austin, Texas).

"Multiple-stage Doherty power amplifiers implemented with multiple semiconductor technologies" was invented by Mark Pieter van der Heijden (Eindhoven, Netherlands), Joseph Staudinger (Gilbert, Ariz.) and Elie A. Maalouf (Mesa, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes an integrated circuit (IC) die. The IC die includes a silicon germanium (SiGe) substrate, a first RF signal input terminal, a first RF signal output terminal, a first amplification path between the first RF signal input terminal and the first RF signal output terminal, a second RF signal ...