US Patent Issued to NXP USA on Dec. 9 for "Amplifier modules with power transistor die and peripheral ground connections" (Arizona Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,380, issued on Dec. 9, was assigned to NXP USA INC. (Austin, Texas).

"Amplifier modules with power transistor die and peripheral ground connections" was invented by Elie A. Maalouf (Mesa, Ariz.) and Eduard Jan Pabst (Mesa, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power amplifier module includes a module substrate, a power transistor die, and a heat spreader. The module substrate has first, second, and third module pads exposed at a mounting surface. The power transistor die has an input/output surface that faces the mounting surface, an opposed ground surface, an input pad electrically coupled to the first module pad, an output pad elec...