US Patent Issued to NXP USA on Dec. 16 for "Method for forming a transistor with a conductivity doped base structure" (Dutch, American Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,634, issued on Dec. 16, was assigned to NXP USA INC. (Austin, Texas).

"Method for forming a transistor with a conductivity doped base structure" was invented by Jay Paul John (Chandler, Ariz.), James Albert Kirchgessner (Tempe, Ariz.), Ljubo Radic (Gilbert, Ariz.) and Johannes Josephus Theodorus Marinus Donkers (Valkenswaard, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a transistor with an emitter, intrinsic base, and collector. The base includes a semiconductor layer doped with a conductivity dopant to provide for a lower resistivity path to the intrinsic base. After the formation of a layer over a substrate, an ...