ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,766, issued on April 29, was assigned to NXP USA Inc. (Austin, Texas).
"Semiconductor device with open cavity and method therefor" was invented by Michael B. Vincent (Chandler, Ariz.) and Scott M. Hayes (Chandler, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device is provided. The method includes placing a semiconductor die on a carrier substrate and placing a sacrificial blank on the carrier substrate with a routing structure attached to the sacrificial blank. At least a portion of the semiconductor die, sacrificial blank, and routing structure are encapsulated with an encapsulant. The carrier substrate i...