ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,784, issued on Oct. 28, was assigned to NXP B.V. (Eindhoven, Netherlands).
"Semiconductor device with lateral base link region" was invented by Jay Paul John (Chandler, Ariz.) and James Albert Kirchgessner (Tempe, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, such as a heterojunction bipolar transistor (HBT), may include an extrinsic base region an intrinsic base region, and a lateral base link region disposed between and in contact with each of the extrinsic base region and an intrinsic base region. The extrinsic base region, the lateral base link region, and a portion of the intrinsic base region each may be formed o...