ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,311, issued on Nov. 25, was assigned to NXP B.V. (Eindhoven, Netherlands).
"ESD clamp circuit with vertical bipolar transistor" was invented by Dolphin Abessolo Bidzo (Nijmegen, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor die has ESD clamp circuits that include vertical PNP transistors. The vertical PNP transistors include at least one region in a semiconductor substrate that is substrate isolated from a biased portion of the substrate. The ESD clamp circuits include a resistive element that is electrically coupled in a conductive path between the emitter and base of the vertical PNP transistor. The PNP transistor is c...