US Patent Issued to NXP on May 27 for "Semiconductor device with fast turn-on ESD protection circuit and method therefor" (Dutch Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,316,107, issued on May 27, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device with fast turn-on ESD protection circuit and method therefor" was invented by Guido Wouter Willem Quax (Wijchen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection circuit is provided. The ESD circuit includes a first transistor, a second transistor, and a silicon-controlled rectifier (SCR) circuit. The first transistor includes a first current electrode coupled at a first node, and a second current electrode and a control electrode coupled at a first voltage supply node. The second transistor includes a...