US Patent Issued to NXP on June 17 for "Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor" (Arizona Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,254, issued on June 17, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor" was invented by Ibrahim Khalil (Phoenix), Bernhard Grote (Phoenix), Humayun Kabir (Gilbert, Ariz.) and Bruce McRae Green (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate w...