ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,335, issued on July 22, was assigned to NXP B.V. (Eindhoven, Netherlands).
"MIS capacitor and method of making a MIS capacitor" was invented by Chao Chen (Shanghai), Zhouyi Luo (Shanghai) and Feng Cong (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "A MIS capacitor and a method of making the same. The capacitor includes a semiconductor substrate having a first part having a first conductivity type and contact regions for coupling the first part to an output node. The substrate has dielectric on a surface of the first part and electrodes on the dielectric. The substrate has a second part having a second conductivity type and a third part hav...