ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,218, issued on Feb. 3, was assigned to NXP B.V. (Eindhoven, Netherlands).
"Circuit with SOI transistors for providing a CTAT current" was invented by Anjani Kumar Mishra (Faridabad, India), Charan Hemanth Kumar (Bangalore, India) and Achal Venkatesh (Bangalore, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "A CTAT circuit that generates a CTAT current. The circuit includes two SOI transistors of a first conductivity type arranged in a current mirror configuration where the gates of the two transistors and the back gate contact of one of the transistors is connected to the drain of the other transistor. The SOI transistor of the first conductivi...