US Patent Issued to NXP on Dec. 16 for "Semiconductor device with improved mechanical stress resistance" (Arizona Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,632, issued on Dec. 16, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device with improved mechanical stress resistance" was invented by Saumitra Raj Mehrotra (Scottsdale, Ariz.) and Xu Cheng (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device that includes: a semiconductor substrate having a first doped region of a first doping type and a second doped region of a second doping type, the first doped region being beneath but immediately adjacent to, the second doped region, with the first doping type being opposite the second doping type, thereby forming a junction region between the ...