US Patent Issued to NXP on Aug. 12 for "Semiconductor device with cavity carrier and method therefor" (Chinese, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,985, issued on Aug. 12, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device with cavity carrier and method therefor" was invented by Kuan-Hsiang Mao (Kaohsiung, China), Zhiwei Gong (Chandler, Ariz.) and Neil Thomas Tracht (Paradise Valley, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device is provided. The method includes forming a first cavity at a first major surface of a first encapsulant. A first semiconductor die is affixed on the first major surface of the first encapsulant and a second semiconductor die is affixed on a bottom surface of the first cavity. A second encapsulant en...