US Patent Issued to NUVOTON TECHNOLOGY on Nov. 18 for "Semiconductor device and semiconductor structure for electrostatic protection" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,832, issued on Nov. 18, was assigned to NUVOTON TECHNOLOGY Corp. (Hsinchu Science Park, Taiwan).

"Semiconductor device and semiconductor structure for electrostatic protection" was invented by Yi-Hao Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device for protecting an internal circuit includes a transistor, a first doping region, and a second doping region. The transistor includes a gate terminal, a source terminal, and a drain terminal. The gate terminal is coupled to a ground. The source terminal is coupled to the internal circuit. The drain terminal is coupled to an input/output pad. The first doping regi...