US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on Oct. 7 for "Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,342, issued on Oct. 7, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element" was invented by Kunimasa Takahashi (Toyama, Japan), Shinji Yoshida (Shiga, Japan) and Hidetoshi Furukawa (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting element includes a light emission layer including a group III nitride semiconductor; an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al; and a p-type clad layer disposed above and in contac...