US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on Oct. 28 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,764, issued on Oct. 28, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Yusuke Kanda (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a Si substrate; a back electrode provided below the Si substrate; a SiC layer provided above the Si substrate; a nitride semiconductor layer provided above the SiC layer; a source electrode and a drain electrode provided above the nitride semiconductor layer; a gate electrode in contact with the nitride semiconductor layer; an intermediate layer provided in an open...