ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,771, issued on Nov. 18, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).
"Semiconductor device" was invented by Yusuke Kanda (Toyama, Japan) and Jun Shimizu (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a back-barrier layer, a channel layer that has a band gap smaller than a band gap of the back-barrier layer, a first barrier layer that has a band gap larger than the band gap of the channel layer, a second barrier layer that is provided to fill a first recessed portion and has a band gap larger than the band gap of the channel layer, a source electrode, a drain electrod...