US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on May 27 for "Semiconductor device for power amplification" (Japanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,533, issued on May 27, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Semiconductor device for power amplification" was invented by Akihiko Nishio (Ishikawa, Japan) and Hiroyuki Doi (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device for high-frequency amplification includes a substrate; a first nitride semiconductor layer above the substrate; a two-dimensional electron gas layer; a second nitride semiconductor layer; and a source electrode, a drain electrode, and a gate electrode spaced apart from each other above the first nitride semiconductor layer. In a plan view, an active region with a t...