US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on March 18 for "Semiconductor light emitting element and semiconductor light emitting device" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,278, issued on March 18, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Semiconductor light emitting element and semiconductor light emitting device" was invented by Yasumitsu Kunoh (Toyama, Japan), Masahiro Kume (Toyama, Japan), Masanori Hiroki (Shiga, Japan), Keimei Masamoto (Niigata, Japan), Toshiya Fukuhisa (Osaka, Japan) and Shigeo Hayashi (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light emitting element includes: a substrate; an n-type layer; a light emitting layer; a p-type layer; a p electrode located above the p-type layer; an n electrode located in a region that is above the n-type ...