ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,580, issued on March 18, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).
"Semiconductor device" was invented by Toshiya Fukudome (Toyama, Japan), Koji Nakatsu (Toyama, Japan) and Shigeo Hayashi (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a mounting substrate; a thin cured silicone resin material film above and in contact with the mounting substrate; and a first cured silicone resin material in contact with the thin cured silicone resin material film. In the semiconductor device, an oxygen content per unit volume in the whole region in a thickness direction of the thin cured sili...