ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,627, issued on June 24, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Manufacturing method and semiconductor device" was invented by Kazumi Tsutsumida (Kyoto, Japan), Katsuyoshi Jokyu (Kyoto, Japan) and Keiichi Murayama (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device manufacturing method includes: forming a first groove having depth H in a semiconductor layer; filling the first groove with an oxide film and forming a surface oxide film having thickness a on an upper surface of the semiconductor layer to equalize the oxide film and the surface oxide film in height; forming a second groove ha...