US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on Jan. 28 for "Semiconductor light-emitting apparatus and method of fabricating semiconductor light-emitting apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,212,115, issued on Jan. 28, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Semiconductor light-emitting apparatus and method of fabricating semiconductor light-emitting apparatus" was invented by Katsuya Samonji (Toyama, Japan) and Tohru Nishikawa (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second r...