ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,331, issued on Feb. 11, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).
"Semiconductor device" was invented by Katsuhiko Kawashima (Hyogo, Japan), Yoshinori Takami (Toyama, Japan), Dai Motojima (Toyama, Japan) and Yusuke Kanda (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a gate electrode including a junction portion forming a Schottky junction with a barrier layer; a projecting portion including first and second gate field plates and projecting from the junction portion; and an insulating layer including first and second sidewalls. An angle formed between a highest position of a ...